Spectrum Software
Industrial Strength Simulation




Spectrum Software has released Micro-Cap 11, the eleventh generation of our SPICE circuit simulator.

For users of previous Micro-Cap versions, check out the new features available in the latest version. For those of you who are new to Micro-Cap, take our features tour to see what Micro-Cap has to offer.






MOSFET binning is the process of adjusting model parameters for different values of drawn channel length and width. While the original Berkeley method of binning is available for all BSIM models, the HSPICE binning is only available for BSIM3 and BSIM4 models.

HSPICE style binning uses multiple model statements to model the MOSFET characteristics over a range of lengths and widths. Each model statement models a portion of the length and width ranges. There are eight MOSFET parameters that apply to HSPICE style binning. They are as follows:

LMIN - This parameter defines the minimum length that the model statement will apply to.
LMAX - This parameter defines the maximum length that the model statement will apply to.
WMIN - This parameter defines the minimum width that the model statement will apply to.
WMAX - This parameter defines the maximum width that the model statement will apply to.
LREF - This is the reference length that the model parameters are assumed to apply for.
WREF - This is the reference width that the model parameters are assumed to apply for.
BINFLAG - If this parameter is set greater than 0.9 and an LREF or WREF parameter is present in the model statement, then HSPICE style binning will be available for this model.
BINUNIT - If this parameter is set to 1, then all geometry parameters are defined in microns. For any other values, the dimensions are meters.

The LREF and WREF parameters are offset values used to interpolate a value within the boundaries created by the minimum and maximum length and width parameters. The model parameters are assumed to apply for the case Leff=LREF and Weff=WREF.

The circuit below provides a simple example of a MOSFET using HSPICE style binning.

HSPICE style MOSFET binning example

In the text area of this circuit, there are three model statements as follows:



+ LREF=110U WREF=125U BINFLAG=1 BINUNIT=0 VTH0=1.1 ...)

Here BSIM3 is the basic model name and BSIM3.1, BSIM3.2, and BSIM3.3 are the individual binning models for the width and length values that fall between WMIN and WMAX and LMIN and LMAX. For HSPICE binning, the model names must have the format NAME.n where NAME is the model name and n is the number that specifies the individual binning model. Only n will vary between binning models. The LEVEL=8 parameter declaration defines these MOSFET models as using the BSIM3 level. Along with the binning parameters shown above, the VTH0 parameter has also been changed between each model in order to demonstrate the use of binning in the analysis.

The VALUE attribute of the MOSFET has been defined as:

W=wmos L=lmos

with the following define statements in the schematic:

.define lmos 3u
.define wmos 3u

For HSPICE style binning, the length and width must be specified in the VALUE attribute. Micro-Cap allows L and W to be specified in the model statement, but binning will always use the length and width specified in the VALUE attribute. In the schematic, the MODEL attribute of the MOSFET has been defined with the name BSIM3. Since the length and width were specified in the VALUE attribute, Micro-Cap is going to look for any possible binning models in the format BSIM3.n that match the length and width specified. If it doesn't find an appropriate binning model, Micro-Cap will then look for a model that has the name BSIM3 only. If neither of these searches are successful, an error will be returned.

For this example, an AC analysis will be run. The Stepping dialog box has been setup to step both of the define variables, wmos and lmos, simultaneously. Each of these variables is defined to step with the List method through the values: 3u, 10u, and 30u. The figure below displays the resulting AC analysis.

HSPICE binning AC analysis results

The simulation produced three runs where the length and width of the MOSFET have been defined as:

Run1: L=3u and W=3u
Run2: L=10u and W=10u
Run3: L=30u and W=30u

The MOSFET model chosen by Micro-Cap for each run is determined by the width and length boundaries of the binning models as follows:

WMIN <= W And W <= WMAX
LMIN <= L And L <= LMAX

For each run the following models were used:

Run1: BSIM3.1
Run2: BSIM3.2
Run3: BSIM3.3

In the top plot, the output of the schematic has been plotted. The bottom plot is displaying the waveform for M1.VTH0. This prints out the value of the model parameter VTH0 that the MOSFET called M1 in the schematic is using during the run. Note that the value of VTH0 has changed as expected as a new model is found for each run.

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